IRF9Z30 DATASHEET PDF

IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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Order code Marking Package Packing. General Features Figure 1. N-channel 55 V, 4. Product names and markings noted herein may be trademarks of their respective owners. C Soldering Temperature, for 10 seconds 1. This device is suitable.

Storage Temperature Range Soldering Temperature, for 10 seconds 1. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.

IRF9Z30 MOSFET. Datasheet pdf. Equivalent

N-channel 80 V, 0. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Such statements are not binding statements about the suitability of products for a particular application. Typical Gate Charge vs.

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Switching Time Test Circuit Fig. Products may be manufactured at one of several qualified locations. Q g typical nc 27 A. This device is suitable More information. Statements regarding the suitability of products for certain types of applications are based on Vishay dayasheet knowledge of typical requirements that are often placed on Vishay products in generic applications.

Start display at page:. To make this website work, we eatasheet user data and share it with processors. High Performance Schottky Rectifier, 3. A, 4Dec 3 Document Number: N-channel 60 V, 0. To use this website, you must agree to our Privacy Policyincluding cookie policy.

Thermal Resistance Symbol Parameter Typ. Absolute Maximum Ratings Parameter Max.

(PDF) IRF9Z30 Datasheet download

Repetitive rating; pulse width limited by maximum junction temperature see fig. R DS on max. They retain all of the ir9z30 of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. A, 4Dec Document Number: No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

Please contact authorized Vishay personnel to obtain written datasbeet and conditions regarding products designed for such applications.

Typical Transfer Characteristics Fig. A Qualified More information. A, 4Dec 6 Document Number: A, 4Dec 4 Document Number: Data Sheet June File Number Order code Marking Packages Packaging. Typical Output Characteristics Fig.

Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. High Performance Schottky Rectifier, 1. This advanced technology More information.

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Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

IRF9Z30 – (IRF9Z30 / IRF9Z34) P-Channel Power MOSFETs

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N-channel 60V – 0. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

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