IRF V N-channel Mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS. IRF Datasheet PDF Download – V N-Channel MOSFET, IRF data sheet. Seventh Generation HEXFET® Power MOSFETs from. International Rectifier utilize advanced processing techniques to achieve extremely low.
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This advanced technology has been especially tailored to. Thermal Resistance, Case-to-Sink Typ. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. Thermal Resistance, Junction-to-Ambient Max.
These N-Channel enhancement mode power field effect. Q gd Gate-Drain Charge. Zero Gate Voltage Drain Current. Zero Gate Voltage Drain Current. Specifications may change in any manner without notice. These N-Channel enhancement mode power field effect.
Q gs Gate-Source Charge. Fairchild Semiconductor Electronic Components Datasheet. Body Diode Reverse Current.
Gate-Body Leakage Current, Forward. Q g Total Gate Charge. Note 4 — 1. Min Typ Max Units.
IRF650A MOSFET. Datasheet pdf. Equivalent
I AR Avalanche Current. Thermal Resistance, Junction-to-Case Max.
Gate-Body Leakage Current, Reverse. Datasgeet gs Gate-Source Charge. Thermal Resistance, Case-to-Sink Typ. The datasheet is printed for reference information only. Pulse width limited by maximum junction temperature 2.
Thermal Resistance, Case-to-Sink Typ.
C iss Input Capacitance. Note 4 — 1. Pulse width limited by maximum junction temperature.
Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Formative or In Design. Essentially independent of operating temperature. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, lrf650 withstand high energy pulse in the avalanche and commutation mode.
IRF (FAIRCHILD) PDF技术资料下载 IRF 供应信息 IC Datasheet 数据表 (2/10 页)
Body Diode Forward Voltage. This datasheet contains the design specifications for product development. Q g Total Gate Charge. This advanced technology has been especially tailored to. Gate-Body Leakage Current, Forward.
IRF Datasheet pdf – V N-Channel MOSFET – Fairchild Semiconductor
Life support devices or systems are devices or systems which, a are intended for surgical implant into the body, or b support or sustain life, or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
Min Typ Max Units. Drain Current and Gate Voltage. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
EnSignaTM Across the board. Search field Part name Part description. Essentially independent of operating temperature. The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Note 4, 5 Maximum lead temperature for soldering purposes. I AR Avalanche Current. Thermal Resistance, Junction-to-Case Max.
Single Pulsed Avalanche Energy. C rss Reverse Transfer Capacitance.