BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. SOT; The seating plane is electrically isolated from all terminals.

Product specification This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Test circuit inductive load. Typical DC current gain. Application information Where application information is given, it is advisory and does not form part of the specification.


But11af datasheet view

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is datashewt implied. August 8 Rev 1.

Extension for repetitive pulse operation. UNIT – – 1.

Refer to mounting instructions for F-pack envelopes. Exposure to limiting values for extended periods may affect device reliability. Switching times waveforms with resistive load.

BUT11AF Datasheet, Equivalent, Cross Reference Search

August 7 Rev 1. No liability will be accepted by dayasheet publisher for any consequence of its use. August 4 Ptot max and Ptot peak max lines. Oscilloscope display for But11ag. Typical base-emitter and collector-emitter saturation voltages. Normalised power derating and second breakdown curves. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.


Forward bias safe operating area. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Test circuit for VCEOsust. August 2 Rev 1. Stress above xatasheet or more of the limiting values may cause permanent damage to the device.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

BUT11AF Datasheet PDF –

Switching times waveforms with inductive load. Reverse bias safe operating area. Typical base-emitter saturation voltage. Region of permissible DC operation. Test circuit resistive load.